Mixed Al and Si doping in ferroelectric HfO2 thin films

被引：41

作者：

Lomenzo, Patrick D. ^{[1
]}

Takmeel, Qanit ^{[2
]}

Zhou, Chuanzhen ^{[3
]}

Chung, Ching-Chang ^{[4
]}

Moghaddam, Saeed ^{[5
]}

Jones, Jacob L. ^{[4
]}

Nishida, Toshikazu ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] N Carolina State Univ, Coll Engn, Analyt Instrumentat Ctr, Raleigh, NC 27696 USA

[4] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27696 USA

[5] Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 24期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.4937588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric HfO2 thin films 10nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO2 greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of similar to 20 mu C/cm(2) and a coercive field strength of similar to 1.2MV/cm. Post-metallization anneal temperatures from 700 degrees C to 900 degrees C were used to crystallize the Al and Si doped HfO2 thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO2 thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO2 thin films exhibit a remanent polarization greater than 15 mu C/cm(2) up to 10(8) cycles. (C) 2015 AIP Publishing LLC.

引用

页数：5

共 19 条

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