MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology

被引：5

作者：

Gassilloud, R. ^{[1
]}

Martin, F. ^{[1
]}

Leroux, C. ^{[1
]}

Hopstaken, M. ^{[1
]}

Garros, X. ^{[1
]}

Casse, M. ^{[1
]}

Reimbold, Gilles ^{[1
]}

Billon, Thierry ^{[1
]}

Bensahel, Daniel ^{[2
]}

机构：

[1] CEA, LETI Minatec, F-38000 Grenoble, France

[2] STMicroelectronics, F-38926 Crolles, France

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 03期

关键词：

Tungsten silicide; Organo-metallic chemical vapor deposition; MOCVD; High-k; NMOS transistors; TUNGSTEN;

D O I：

10.1016/j.mee.2008.04.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report material and electrical properties of tungsten silicide metal gate deposited on 12 in. wafers by chemical vapor deposition (CVD) using a fluorine free organo-metallic (MO) precursor. We show that this MOCVD WSix thin film deposited on a high-k dielectric (HfSiO:N) shows a N+ like behavior (i.e. metal workfunction progressing toward silicon conduction band). We obtained a high-k/WSix/polysilicon "gate first" stack (i.e. high thermal budget) providing stable equivalent oxide thickness (EOT) of similar to 1.2 nm, and a reduction of two decades in leakage current as compared to SiO2/polysilicon standard stack. Additionally, we obtained a metal gate with an equivalent workfunction (EWF) value of similar to 4.4 eV which matches with the +0.2 eV above Si midgap criterion for NMOS in ultra-thin body devices. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：263 / 267

页数：5

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