MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology

被引：5

作者：

Gassilloud, R. ^{[1
]}

Martin, F. ^{[1
]}

Leroux, C. ^{[1
]}

Hopstaken, M. ^{[1
]}

Garros, X. ^{[1
]}

Casse, M. ^{[1
]}

Reimbold, Gilles ^{[1
]}

Billon, Thierry ^{[1
]}

Bensahel, Daniel ^{[2
]}

机构：

[1] CEA, LETI Minatec, F-38000 Grenoble, France

[2] STMicroelectronics, F-38926 Crolles, France

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 03期

关键词：

Tungsten silicide; Organo-metallic chemical vapor deposition; MOCVD; High-k; NMOS transistors; TUNGSTEN;

D O I：

10.1016/j.mee.2008.04.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report material and electrical properties of tungsten silicide metal gate deposited on 12 in. wafers by chemical vapor deposition (CVD) using a fluorine free organo-metallic (MO) precursor. We show that this MOCVD WSix thin film deposited on a high-k dielectric (HfSiO:N) shows a N+ like behavior (i.e. metal workfunction progressing toward silicon conduction band). We obtained a high-k/WSix/polysilicon "gate first" stack (i.e. high thermal budget) providing stable equivalent oxide thickness (EOT) of similar to 1.2 nm, and a reduction of two decades in leakage current as compared to SiO2/polysilicon standard stack. Additionally, we obtained a metal gate with an equivalent workfunction (EWF) value of similar to 4.4 eV which matches with the +0.2 eV above Si midgap criterion for NMOS in ultra-thin body devices. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：263 / 267

页数：5

共 50 条

[1] Metal electrode/high-k dielectric gate-stack technology for power management
Lee, Byoung Hun
Song, Seung Chul
Choi, Rino
Kirsch, Paul
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (01) : 8 - 20
[2] Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
Zhu, SY
Yu, HY
Chen, JD
Whang, SJ
Chen, JH
Shen, C
Zhu, CX
Lee, SJ
Li, MF
Chan, DSH
Yoo, WJ
Du, AY
Tung, CH
Singh, J
Chin, A
Kwong, DL
SOLID-STATE ELECTRONICS, 2004, 48 (10-11) : 1987 - 1992
[3] Choice of Metal as Gate Electrode of Thin-Film Transistor With High-k Gate Dielectric
Sun, Hao
Deng, Yu Heng
Wang, Qing He
Lai, P. T.
IEEE ELECTRON DEVICE LETTERS, 2025, 46 (02) : 286 - 289
[4] Anomalous Width Dependence of Gate Current in High-K Metal Gate nMOS Transistors
Duhan, Pardeep
Ganeriwala, Mohit D.
Rao, V. Ramgopal
Mohapatra, Nihar R.
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (08) : 739 - 741
[5] Dielectric breakdown in a 45 nm high-k/metal gate process technology
Prasad, C.
Agostinelli, M.
Auth, C.
Brazier, M.
Chau, R.
Dewey, G.
Ghani, T.
Hattendorf, M.
Hicks, J.
Jopling, J.
Kavalieros, J.
Kotlyar, R.
Kuhn, M.
Kuhn, K.
Maiz, J.
McIntyre, B.
Metz, M.
Mistry, K.
Pae, S.
Rachmady, W.
Ramey, S.
Roskowski, A.
Sandford, J.
Thomas, C.
Wiegand, C.
Wiedemer, J.
2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, : 667 - +
[6] Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric
Min, K. S.
Park, C.
Kang, C. Y.
Park, C. S.
Park, B. J.
Kim, Y. W.
Lee, B. H.
Lee, Jack C.
Bersuker, G.
Kirsch, P.
Jammy, R.
Yeom, G. Y.
SOLID-STATE ELECTRONICS, 2013, 82 : 82 - 85
[7] Challenges and opportunities in high-k gate dielectric technology
Niwa, M
Harada, Y
Yamamoto, K
Hayashi, S
Mitsuhashi, R
Eriguchi, K
Kubota, M
Hoshino, Y
Kido, Y
Kwong, DL
RAPID THERMAL AND OTHER SHORT-TIME PROCESSING TECHNOLOGIES III, PROCEEDINGS, 2002, 2002 (11): : 99 - 115
[8] Design and Optimization of 22 nm Gate Length High-k/Metal gate NMOS Transistor
Maheran, Afifah A. H.
Menon, P. S.
Ahmad, I.
Shaari, S.
Elgomati, H. A.
Salehuddin, F.
3RD ISESCO INTERNATIONAL WORKSHOP AND CONFERENCE ON NANOTECHNOLOGY 2012 (IWCN2012), 2013, 431
[9] High-K/Metal Gate technology: A new horizon
Khare, Mukesh
PROCEEDINGS OF THE IEEE 2007 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2007, : 417 - 420
[10] A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode
Xu, J. P.
Xiao, X.
Lai, P. T.
MICROELECTRONICS RELIABILITY, 2010, 50 (08) : 1081 - 1086

← 1 2 3 4 5 →