Alloy effects in Ga1-xInxN/GaN heterostructures

被引：10

作者：

Nguyen, DP ^{[1
]}

Regnault, N ^{[1
]}

Ferreira, R ^{[1
]}

Bastard, G ^{[1
]}

机构：

[1] Ecole Normale Super, Lab Pierre Algrain, Dept Phys, F-75005 Paris, France

来源：

SOLID STATE COMMUNICATIONS | 2004年 / 130卷 / 11期

关键词：

nanostructures; nitride alloy; virtual crystal approximation;

D O I：

10.1016/j.ssc.2004.03.048

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the virtual crystal approximation to describe the electronic structure of Ga1-xInxN/GaN heterostructures, while this approximation works very well for the Ga1-xInxAs/GaAs heterostructures. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：751 / 754

页数：4

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