Alloy effects in Ga1-xInxN/GaN heterostructures

被引：10

作者：

Nguyen, DP ^{[1
]}

Regnault, N ^{[1
]}

Ferreira, R ^{[1
]}

Bastard, G ^{[1
]}

机构：

[1] Ecole Normale Super, Lab Pierre Algrain, Dept Phys, F-75005 Paris, France

来源：

SOLID STATE COMMUNICATIONS | 2004年 / 130卷 / 11期

关键词：

nanostructures; nitride alloy; virtual crystal approximation;

D O I：

10.1016/j.ssc.2004.03.048

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the virtual crystal approximation to describe the electronic structure of Ga1-xInxN/GaN heterostructures, while this approximation works very well for the Ga1-xInxAs/GaAs heterostructures. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：751 / 754

页数：4

共 50 条

[1] Properties of Ga1-xInxN mixed crystals and Ga1-xInxN/GaN quantum wells
Zheng, RS
Taguchi, T
Matsuura, M
JOURNAL OF APPLIED PHYSICS, 2000, 87 (05) : 2526 - 2532
[2] Properties of Ga1-xInxN mixed crystals and Ga1-xInxN/GaN quantum wells
1600, American Institute of Physics Inc. (87):
[3] Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
PHYSICAL REVIEW B, 2000, 62 (20) : R13302 - R13305
[4] Ellipsometric investigation of optical constant and band gap of Ga1-xInxN/GaN (x ≤ 0.12) heterostructures
Lee, MH
Kim, KJ
Oh, E
SOLID STATE COMMUNICATIONS, 2000, 114 (06) : 325 - 328
[5] Optical absorption in polarized Ga1-xInxN/GaN quantum wells
Wetzel, C
Kamiyama, S
Amano, H
Akasaki, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (01): : 11 - 14
[6] Optical absorption in polarized Ga1-xInxN/GaN quantum wells
Wetzel, C. (Wetzel@ieee.org), 1600, Japan Society of Applied Physics (41):
[7] Strain relaxation in Ga1-xInxN thin layers grown on GaN sublayers
Zielinska-Rohozinska, E
Gronkowski, J
Pakula, K
Majer, M
Regulska, M
Nowicki, L
JOURNAL OF ALLOYS AND COMPOUNDS, 2001, 328 (1-2) : 199 - 205
[8] Electronic structures of Wurtzite GaN, InN and their alloy Ga1-xInxN calculated by the tight-binding method
Yang, Tao
Nakajima, Sadanojo
Sakai, Shiro
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (11): : 5912 - 5921
[9] Electronic structures of wurtzite GaN, InN and their alloy Ga1-xInxN calculated by the tight-binding method
Yang, T
Nakajima, S
Sakai, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (11): : 5912 - 5921
[10] PROPERTIES OF GA1-XINXN FILMS PREPARED BY MOVPE
NAGATOMO, T
KUBOYAMA, T
MINAMINO, H
OMOTO, O
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08): : L1334 - L1336

← 1 2 3 4 5 →