Effect of hydrogen on the photoelectronic properties of GaAs/InGaAs quantum-well heterostructures with an island palladium layer on the surface

被引：1

作者：

Karpovich, IA ^{[1
]}

Tikhov, SV ^{[1
]}

Shobolov, EL ^{[1
]}

Zvonkov, BN ^{[1
]}

机构：

[1] Lobachevsky State Univ, Nizhnii Novgorod 603950, Russia

来源：

TECHNICAL PHYSICS | 2002年 / 47卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1514806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of hydrogen on the photoluminescence and planar conductivity of GaAs/InGaAs quantum-well heterostructures with an island Pd layer at the anodically oxidized surface was studied. Unlike continuous deposited Pd layers, island layers do not cause the formation of defects in the GaAs surface region and yet the Pd layer maintains high catalytic activity with respect to hydrogen. It is found that the thermal treatment of such a structure in a hydrogen atmosphere causes atomic-hydrogen passivation of the defects in quantum wells. Studies of the characteristics of planar photoresistors with an island Pd layer acting as hydrogen sensors show that their hydrogen detectivity is approximately two orders of magnitude higher than that of diode structures with continuous Pd layers. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：1268 / 1271

页数：4

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