Frequency and temperature dependence of the depletion voltage from CV measurements for irradiated Si detectors

被引：26

作者：

Campbell, D ^{[1
]}

Chilingarov, A ^{[1
]}

Sloan, T ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 492卷 / 03期

关键词：

irradiated silicon detectors; depletion voltage; frequency dependence; temperature dependence;

D O I：

10.1016/S0168-9002(02)01353-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The dependence on measurement frequency and temperature of the depletion voltage extracted in the standard way from the CV characteristics of heavily irradiated silicon detectors is studied. parameterised and fitted. A similar pattern of behaviour is observed for a wide ran-c of analysed detectors. A formula is derived which allows correction of the depletion voltage from one frequency-temperature point to another. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：402 / 410

页数：9

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