Intense photoluminescence from amorphous tantalum oxide films

被引：65

作者：

Zhu, Minmin ^{[1
]}

Zhang, Zhengjun ^{[1
]}

Miao, Wei ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 02期

关键词：

D O I：

10.1063/1.2219991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tantalum oxide films were deposited on silicon substrates at a temperature of similar to 450 degrees C by heating a pure tantalum foil in a rough vacuum. The. films were amorphous in structure and consisted of fully oxidized Ta2O5 and (TaOx, x < 2.5) suboxides. This feature resulted in strong visible light emission from the films further oxidized in the air at temperatures of 200-300 degrees C. The mechanism for this photoluminescence behavior of the amorphous tantalum oxide films was also investigated and discussed. This study suggests that wide-band-gap materials could act as effective visible light emitters and provides a simple route to synthesize such materials. (c) 2006 American Institute Of Physics.

引用

页数：3

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