Shockley-Read-Hall lifetimes in CdTe

被引：14

作者：

Buurma, C. ^{[1
]}

Krishnamurthy, S. ^{[1
,2
]}

Sivananthan, S. ^{[1
]}

机构：

[1] Univ Illinois, Microphys Lab, Chicago, IL 60607 USA

[2] SRI Int, Appl Opt Lab, Menlo Pk, CA 94015 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 01期

关键词：

SOLAR-CELLS; RECOMBINATION; EFFICIENCY; TRANSPORT; CRYSTALS;

D O I：

10.1063/1.4886386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A combination of first principles electronic structure calculations, Green's function method, and empirical tight-binding Hamiltonian method is used to evaluate the minority carrier lifetimes of CdTe due to recombination via native point defects in CdTe. For defect energy levels near mid-gap, our calculated value of the Shockley-Read-Hall capture cross section for both electrons and holes is similar to 10(-13) cm(2), which is considerably different from the most commonly employed values. We further find that minority carrier lifetimes in doped CdTe are affected more by defect levels closer to the Fermi level than those in the mid-gap. (C) 2014 AIP Publishing LLC.

引用

页数：4

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