Interface Optimization and Electrical Properties of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Films Prepared by a Sol-Gel Process

被引：25

作者：

Chi, Q. G. ^{[1
,2
,3
]}

Zhang, C. H. ^{[1
]}

Sun, J. ^{[1
]}

Yang, F. Y. ^{[1
]}

Wang, X. ^{[2
]}

Lei, Q. Q. ^{[2
]}

机构：

[1] Harbin Univ Sci & Technol, Sch Appl Sci, Harbin 150080, Peoples R China

[2] Harbin Univ Sci & Technol, Minist Educ, Key Lab Engn Dielect & Its Applicat, Harbin 150080, Peoples R China

[3] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2014年 / 118卷 / 28期

基金：

美国国家科学基金会;

关键词：

LOW-TEMPERATURE CRYSTALLIZATION; PIEZOELECTRIC PROPERTIES; LEAKAGE CURRENT; EVOLUTION; PZT;

D O I：

10.1021/jp5036103

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, 0.5Ba(Zr0.2Ti0.8)O-3-0.5-(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) thin films were synthesized at 500 degrees C by introducing a seed layer. Low interfacial diffusion and high (100) orientation were simultaneously achieved. Minimal leakage current density, dielectric constant, and loss were obtained owing to low crystallization temperature and low interfacial diffusion. The pyroelectric coefficient remained relatively high because of the high orientation, which resulted in superior pyroelectric figures of merit compared with previously reported films. This study demonstrates that low-temperature crystallization can suppress interfacial diffusion and extend film applications by integrating the films with silicon substrates and that thin films annealed at 500 degrees C are good candidates for application in uncooled infrared detectors.

引用

页码：15220 / 15225

页数：6

共 33 条

[1] Dielectric, ferroelectric, and piezoelectric properties of textured BZT-BCT lead-free thick film by screen printing
Bai, Wangfeng
Shen, Bo
Fu, Fang
Zhai, Jiwei
[J]. MATERIALS LETTERS, 2012, 83 : 20 - 22
[2] Low-temperature processing of ferroelectric thin films compatible with silicon integrated circuit technology
Calzada, ML
Bretos, I
Jiménez, R
Guillon, H
Pardo, L
[J]. ADVANCED MATERIALS, 2004, 16 (18) : 1620 - +
[3] Enhanced performance of Pb0.8La0.1Ca0.1Ti0.975O3/Pb(Nb0.01Zr0.2Ti0.8)O3 multilayer thin films for pyroelectric applications
Chi, Q. G.
Wang, X.
Li, W. L.
Fei, W. D.
Lei, Q. Q.
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (24)
[4] Low temperature preparation and electric properties of highly (100)-oriented Pb0.8 La0.1Ca0.1Ti0.975O3 thin films prepared by a sol-gel route
Chi, Q. G.
Li, W. L.
Zhao, Y.
Fei, W. D.
[J]. JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2010, 54 (03) : 286 - 291
[5] Low-temperature crystallization and orientation evolution of Nb-doped Pb(Zr,Ti)O3 thin films using a Pb0.8Ca0.1La0.1Ti0.975O3 seed layer
Chi, Q. G.
Li, W. L.
Feng, B.
Liu, C. Q.
Fei, W. D.
[J]. SCRIPTA MATERIALIA, 2009, 60 (04) : 218 - 220
[6] Effect of annealing conditions on the leakage current characteristics of ferroelectric PZT thin films grown by sol-gel process
Cho, SM
Jeon, DY
[J]. THIN SOLID FILMS, 1999, 338 (1-2) : 149 - 154
[7] Thickness dependence of structure, tunable and pyroelectric properties of laser-ablated Ba(Zr0.25Ti0.75)O3 thin films
Doan, T. M.
Lu, L.
Lai, M. O.
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (03)
[8] Pyroelectric PZT/PMNZTU composite thick films
Dorey, RA
Whatmore, RW
[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2005, 25 (12) : 2379 - 2382
[9] Large piezoelectric effect in lead-free Ba(Zr0.2Ti0.8)O3-(Ba0.7Ca0.3)TiO3 films prepared by screen printing with solution infiltration process
Feng, Zuyong
Shi, Dongqi
Dou, Shixue
Tang, Xingui
Hu, Yihua
[J]. THIN SOLID FILMS, 2013, 527 : 110 - 113
[10] Preparation and characterization of sol-gel derived (100)-textured Pb(Zr,Ti)O3 thin films:: PbO seeding role in the formation of preferential orientation
Gong, W
Li, JF
Chu, XC
Gui, ZL
Li, LT
[J]. ACTA MATERIALIA, 2004, 52 (09) : 2787 - 2793

← 1 2 3 4 →