Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

被引：141

作者：

Gogova, D. ^{[1
]}

Wagner, G. ^{[1
]}

Baldini, M. ^{[1
]}

Schmidbauer, M. ^{[1
]}

Irmscher, K. ^{[1
]}

Schewski, R. ^{[1
]}

Galazka, Z. ^{[1
]}

Albrecht, M. ^{[1
]}

Fornari, R. ^{[1
]}

机构：

[1] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 401卷

关键词：

High resolution X-ray diffraction; Organometallic vapor phase epitaxy; Oxides; Semiconducting materials;

D O I：

10.1016/j.jcrysgro.2013.11.056

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thin films of beta-Ga2O3 doped with Si are grown on Al2O3 (0001) and beta-Ga2O3 (100) substrates by metal organic vapor phase epitaxy. Homoepitaxial growth of single-phase, smooth beta-Ga2O3 layers doped with Si, with a dislocation density not exceeding those of the melt grown substrate, was demonstrated. The interplay between growth conditions, structural and electrical properties of the Ga-oxide layers is studied. XRD and HRTEM show that Si-doping in the concentration range 10(17)-10(18) cm(-3) does not deteriorate the quality of the Ga-oxide layers compared to undoped ones. The different nature of defects in undoped and doped material is investigated by HRTEM. It is found out that the density of twins and stacking faults on a-planes are an order of magnitude lower in beta-Ga2O3:Si than in undoped material, while defects on inclined planes have rarely been observed in beta-Ga2O3. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：665 / 669

页数：5

共 12 条

[1] Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy
Brooks, C. M.
Kourkoutis, L. Fitting
Heeg, T.
Schubert, J.
Muller, D. A.
Schlom, D. G.
[J]. APPLIED PHYSICS LETTERS, 2009, 94 (16)
[2] Comparative study of gasochromic and electrochromic effect in thermally evaporated tungsten oxide thin films
Gogova, D.
Thomas, L. -K.
Camin, B.
[J]. THIN SOLID FILMS, 2009, 517 (11) : 3326 - 3331
[3] Improved ITO thin films for photovoltaic applications with a thin ZnO layer by sputtering
Herrero, J
Guillén, C
[J]. THIN SOLID FILMS, 2004, 451 : 630 - 633
[4] Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
Irmscher, K.
Galazka, Z.
Pietsch, M.
Uecker, R.
Fornari, R.
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)
[5] Fabrication of In2O3 based NO2 gas sensor through AC-electrophoretic deposition
Khiabani, P. Sowti
Marzbanrad, E.
Zamani, C.
Riahifar, R.
Raissi, B.
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 2012, 166 : 128 - 134
[6] X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius films
Kopp, V. S.
Kaganer, V. M.
Schwarzkopf, J.
Waidick, F.
Remmele, T.
Kwasniewski, A.
Schmidbauer, M.
[J]. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2012, 68 : 148 - 155
[7] Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts
Sasaki, Kohei
Higashiwaki, Masataka
Kuramata, Akito
Masui, Takekazu
Yamakoshi, Shigenobu
[J]. APPLIED PHYSICS EXPRESS, 2013, 6 (08)
[8] Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si
Takakura, Kenichiro
Funasaki, Suguru
Tsunoda, Isao
Ohyama, Hidenori
Takeuchi, Daisuke
Nakashima, Toshiyuki
Shibuya, Mutsuo
Murakami, Katsuya
Simoen, Eddy
Claeys, Cor
[J]. PHYSICA B-CONDENSED MATTER, 2012, 407 (15) : 2900 - 2902
[9] Oxygen vacancies and donor impurities in β-Ga2O3
Varley, J. B.
Weber, J. R.
Janotti, A.
Van de Walle, C. G.
[J]. APPLIED PHYSICS LETTERS, 2010, 97 (14)
[10] Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
Villora, Encarnacion G.
Shimamura, Kiyoshi
Yoshikawa, Yukio
Ujiie, Takekazu
Aoki, Kazuo
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (20)

← 1 2 →