Transient and persistent current induced conductivity changes in GaAs/AlGaAs high-electron-mobility transistors

被引：2

作者：

Schulte-Braucks, Christian ^{[1
]}

Valentin, Sascha R. ^{[1
]}

Ludwig, Arne ^{[1
]}

Wieck, Andreas D. ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphys, D-44780 Bochum, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 13期

关键词：

ALAS/GAAS SINGLE-HETEROJUNCTION; FIELD-EFFECT TRANSISTOR; DX CENTERS; PHOTOCONDUCTIVITY; SEMICONDUCTORS;

D O I：

10.1063/1.4870422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of a current induced change of the low temperature conductivity of two-dimensional electron gases in GaAs/AlGaAs-high-electron-mobility transistors. By applying voltage pulses on the ohmic contacts of a Hall bar-mesa-structure, both sheet-carrier-density n(2D) and electron mobility mu are decreased. At temperatures below 50 K, a persistent change combined with a partial transient recovery of n(2D) has been observed. The transient behaviour and the lateral spreading of the effect are studied. Moreover, a temperature dependent investigation has been done in order to get insight into the addressed defect energy levels. A model based on the phenomenology of the effect is proposed. The observed effect is not a permanent degradation as the original carrier concentration can be restored by warming up the sample to room temperature and recooling it. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 20 条

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