PI Timing Measurements in High Speed Flash Memory Embedded Systems

被引:0
作者
Fizesan, R. [1 ]
Pop, O. [1 ]
机构
[1] Tech Univ Cluj Napoca, Appl Elect Dept, Cluj Napoca, Romania
来源
2018 IEEE 24TH INTERNATIONAL SYMPOSIUM FOR DESIGN AND TECHNOLOGY IN ELECTRONIC PACKAGING (SIITME) | 2018年
关键词
power integrity; power distribution network; signal integrity; embedded systems; flash memory;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a case study on how to prevent the power distribution network's performance of a flash memories related to setup and hold times violations. We first review different high-speed factors [1], and point out how data timing can influence power distribution networks (PDNs) at frequencies in the range of megahertz. Experimental results show that even by applying usual PI recommendations could not solve the errors that appear on the supply voltage and in data waveforms, errors that could lead to incorrect values at the output of the NOR flash memory.
引用
收藏
页码:284 / 287
页数:4
相关论文
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