SIMS characterization of segregation in InAs/GaAs heterostructures

被引：10

作者：

Gallardo, S. ^{[1
]}

Kudriatsev, Y. ^{[1
]}

Villegas, A. ^{[1
]}

Ramirez, G. ^{[1
]}

Asomoza, R. ^{[1
]}

Cruz-Hernandez, E. ^{[2
]}

Rojas-Ramirez, J. S. ^{[2
]}

Lopez-Lopez, M. ^{[2
]}

机构：

[1] IPN, Ctr Invest & Estudios Avanzados, Elect Engineer Dept, Mexico City 07738, DF, Mexico

[2] IPN, Ctr Invest & Estudios Avanzados, Dept Phys, Mexico City 07738, DF, Mexico

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 04期

关键词：

Segregation; DRF; Activation energy; MBE; SIMS;

D O I：

10.1016/j.apsusc.2008.05.174

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We performed a detailed study of in situ indium segregation in InAs/GaAs heterostructures during conventional MBE growth process. A set of heterostructures grown under different substrate temperatures was tested. We used in the study a recently developed equation for SIMS's Depth Resolution Function (DRF), which included Recoil Implantation, Cascade Mixing and Sputtering Induced Roughness phenomena (RMR model). Segregation process was included in this DRF as an exponentially increasing function. Then we found from experimental SIMS depth profiles segregation parameters for different growth temperatures and the energy activation for the segregation process. It was found equal to 0.27 eV that is close to values published in literature. A segregation free regime of the growth process was developed experimentally. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1341 / 1344

页数：4

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