Chemical depth profile of ultrathin nitrided SiO2 films

被引：68
作者：
Herrera-Gómez, A
Hegedus, A
Meissner, PL
机构：
[1] CINVESTAV Queretaro, Real De Juriqulla 76230, Queretaro, Mexico
[2] Appl Mat Inc, Thermal Proc Div, Santa Clara, CA 95054 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 06期
关键词：
D O I：
10.1063/1.1494121
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ultrathin nitrided SiO2/Si(001) films were studied using angle-resolved x-ray photoemission spectroscopy. The structure of the oxynitride depended on the nitridation process. Under one type of nitridation the film kept the structure of the SiO2, with N assuming O sites. By taking advantage of the nonuniformity on the chemical depth profile, the Si 2p chemical shift was determined for those Si atoms bonded to three O and one N atom, and for those bonded to two O and two N atoms. The stoichiometry depth profile was recognized through a simple method that allowed the input of physical constrains. (C) 2002 American Institute of Physics.
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页码：1014 / 1016
页数：3
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