Chemical depth profile of ultrathin nitrided SiO2 films

被引：68

作者：

Herrera-Gómez, A

Hegedus, A

Meissner, PL

机构：

[1] CINVESTAV Queretaro, Real De Juriqulla 76230, Queretaro, Mexico

[2] Appl Mat Inc, Thermal Proc Div, Santa Clara, CA 95054 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 06期

关键词：

D O I：

10.1063/1.1494121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrathin nitrided SiO2/Si(001) films were studied using angle-resolved x-ray photoemission spectroscopy. The structure of the oxynitride depended on the nitridation process. Under one type of nitridation the film kept the structure of the SiO2, with N assuming O sites. By taking advantage of the nonuniformity on the chemical depth profile, the Si 2p chemical shift was determined for those Si atoms bonded to three O and one N atom, and for those bonded to two O and two N atoms. The stoichiometry depth profile was recognized through a simple method that allowed the input of physical constrains. (C) 2002 American Institute of Physics.

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页码：1014 / 1016

页数：3

相关论文

共 14 条

[1] ROLE OF INTERFACIAL NITROGEN IN IMPROVING THIN SILICON-OXIDES GROWN IN N2O [J].

CARR, EC ;

BUHRMAN, RA .

APPLIED PHYSICS LETTERS, 1993, 63 (01) :54-56

[2] Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy [J].

Chang, JP ;

Green, ML ;

Donnelly, VM ;

Opila, RL ;

Eng, J ;

Sapjeta, J ;

Silverman, PJ ;

Weir, B ;

Lu, HC ;

Gustafsson, T ;

Garfunkel, E .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4449-4455

[3] ANGLE-RESOLVED XPS AND AES - DEPTH-RESOLUTION LIMITS AND A GENERAL COMPARISON OF PROPERTIES OF DEPTH-PROFILE RECONSTRUCTION METHODS [J].

CUMPSON, PJ .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 73 (01) :25-52

[4] Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations [J].

Gosset, LG ;

Ganem, JJ ;

von Bardeleben, HJ ;

Rigo, S ;

Trimaille, I ;

Cantin, JL ;

Akermark, T ;

Vickridge, IC .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) :3661-3665

[5] Photoemission from the Sr/Si(001) interface [J].

Herrera-Gómez, A ;

Aguirre-Tostado, FS ;

Sun, Y ;

Pianetta, P ;

Yu, Z ;

Marshall, D ;

Droopad, R ;

Spicer, WE .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6070-6072

[6] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

HIMPSEL, FJ ;

MCFEELY, FR ;

TALEBIBRAHIMI, A ;

YARMOFF, JA ;

HOLLINGER, G .

PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

[7]

HORCHELLA MH, 1988, SURF SCI LETT, V197, pL260

[8] THE EFFECT OF RAPID THERMAL N2O NITRIDATION ON THE OXIDE/SI(100) INTERFACE STRUCTURE [J].

LU, ZH ;

TAY, SP ;

CAO, R ;

PIANETTA, P .

APPLIED PHYSICS LETTERS, 1995, 67 (19) :2836-2838

[9] Elimination of sub-oxide transition regions at Si-SiO2 interfaces by rapid thermal annealing at 900 degrees C [J].

Lucovsky, G ;

Banerjee, A ;

Niimi, H ;

Koh, K ;

Hinds, B ;

Meyer, C ;

Lupke, G ;

Kurz, H .

APPLIED SURFACE SCIENCE, 1997, 117 :202-206

[10]

Seah M. P., 1979, Surface and Interface Analysis, V1, P2, DOI 10.1002/sia.740010103