Optical properties of TlInS2 layered single crystals near the absorption edge

被引:19
作者
Qasrawi, A. F. [1 ]
Gasanly, N. M.
机构
[1] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey
[2] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey
关键词
D O I
10.1007/s10853-005-5618-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The sample thickness effect on the optical properties of TlInS2 layered crystals has been investigated at room temperature. The absorption coefficient of the samples calculated from the experimental transmittance and reflectance in the photon energy range of 1.10-3.10 eV has two absorption regions. The first is a long-wavelength region of 1.16-1.28 eV. The second region lies above 2.21 eV with a thickness-dependent indirect band gap. The energy gap decreases from 2.333 to 2.255 eV as the sample thickness increases from 27 to 66 mu m. The differential spectra of absorption coefficient demonstrates the existence of a thickness-dependent impurity level being lowered from 2.360 to 2.307 eV as sample thickness increases from 27 to 66 mu m. (c) 2006 Springer Science + Business Media, Inc.
引用
收藏
页码:3569 / 3572
页数:4
相关论文
共 21 条
[1]  
ABDULLAEV GB, 1983, JETP LETT+, V38, P632
[2]  
Abutalybov G. I., 1984, Soviet Physics - Solid State, V26, P511
[3]  
ABUTALYBOV GI, 1982, SOV PHYS SEMICOND+, V16, P1348
[4]  
Al Kuhaimi SA, 1998, VACUUM, V51, P349, DOI 10.1016/S0042-207X(98)00112-2
[5]   Two-photon absorption in layered TlGaSe2, TlInS2, TlGaS2 and GaSe crystals [J].
Allakhverdiev, KR .
SOLID STATE COMMUNICATIONS, 1999, 111 (05) :253-257
[6]   Deformation effects in electronic spectra of the layered semiconductors TlGaS2, TlGaSe2 and TlInS2 [J].
Allakhverdiev, KR ;
Mammadov, TG ;
Suleymanov, RA ;
Gasanov, NZ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (08) :1291-1298
[7]   Radiative donor-acceptor pair recombination in TlInS2 single crystals [J].
Aydinli, A ;
Gasanly, NM ;
Yilmaz, I ;
Serpengüzel, A .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (07) :599-603
[8]   ELECTRO-ABSORPTION IN TLINS2 [J].
BAKIROV, MY ;
ZEINALOV, NM ;
ABDULLAYEVA, SG ;
GAJIYEV, VA ;
GOJAYEV, EM .
SOLID STATE COMMUNICATIONS, 1982, 44 (02) :205-207
[9]  
BALTRAMEYUNAS R, 1982, SOV PHYS SEMICOND+, V16, P1085
[10]   Temperature dependence of the optical energy gap and thermoelectric studies of TlInS2 crystals [J].
Gamal, GA .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (02) :185-189