Anti-Reflection Characteristics of Si Nanowires for Enhanced Photoluminescence from CdTe/CdS Quantum Dots

被引：0
作者：
Wang, Hong-Yu [1 ,2 ,3 ]
Shan, Dan [2 ,3 ,4 ]
Xu, Ling [2 ,3 ]
机构：
[1] Nanjing Univ Posts & Telecommun, Tongda Coll, Nanjing 210003, Jiangsu, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[4] Yangzhou Polytech Inst, Sch Elect & Informat Engn, Yangzhou 225127, Jiangsu, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2018年 / 35卷 / 05期
基金：
中国国家自然科学基金;
关键词：
SILICON NANOWIRE; SOLAR-CELLS; PHOTOVOLTAIC APPLICATIONS; ARRAYS; NANOCRYSTALS; LUMINESCENCE; CDSE; NANOPARTICLES; FLUORESCENCE; NANOSPHERES;
D O I：
10.1088/0256-307X/35/5/056801
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
CdTe/CdS quantum dots (QDs) are fabricated on Si nanowires (NWs) substrates with and without Au nanoparticles (NPs). The formation of Au NPs on Si NWs can be certified as shown in scanning electron microscopy images. The optical properties of samples are also investigated. It is interesting to find that the photoluminescence (PL) intensity of CdTe/CdS QD films on Si nanowire substrates with Au NPs is significantly increased, which can reach 8-fold higher than that of samples on planar Si without Au NPs. The results of finite-difference time-domain simulation indicate that Au NPs induce stronger localization of electric field and then boost the PL intensity of QDs nearby. Furthermore, the time-resolved luminescence decay curve shows the PL lifetime, which is about 5.5 ns at the emission peaks of QD films on planar, increasing from 1.8 ns of QD films on Si NWs to 4.7ns after introducing Au NPs into Si NWs.
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页数：4
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