Structural and Optical Study of Ga3+ Substitution in CuInS2 Nanoparticles Synthesized by a One-Pot Facile Method

被引:30
作者
Vahidshad, Yaser [1 ]
Tahir, Muhammad Nawaz [2 ]
Zad, Azam Iraji [3 ]
Mirkazemi, Seyed Mohammad [1 ]
Ghasemzadeh, Reza [1 ]
Huesmann, Hannah [2 ]
Tremel, Wolfgang [2 ]
机构
[1] Iran Univ Sci & Technol, Sch Met & Mat Engn, Tehran 16844, Iran
[2] Johannes Gutenberg Univ Mainz, Inst Inorgan Chem & Analyt Chem, D-55099 Mainz, Germany
[3] Sharif Univ Technol, Dept Phys, Tehran 113659161, Iran
关键词
NANOCRYSTAL INKS; SEMICONDUCTOR NANOCRYSTALS; CHALCOPYRITE STRUCTURE; ELECTRONIC-STRUCTURE; THIN-FILMS; METAL; ZN; PHOTOVOLTAICS; ROUTE; CELLS;
D O I
10.1021/jp506584a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A one-pot method was used to synthesize CuInxGa1xS2 nanoparticles by substituting In3+ with Ga3+. The samples with composition of gallium ranging from 0% to 100% were synthesized by solving copper chloride, indium trichloride, gallium acetylacetonate, and thiourea as precursors in 1-octadecene, oleylamine, and oleic acid as noncoordinating, coordinating, and capping agent solvents, respectively. Depending on the chemical composition and synthesis conditions, the morphology of the as-synthesized nanoparticles obtained was trigonal, semitrigonal, hexagonal, and quasi-spherical. X-ray photoelectron spectroscopy and X-ray diffraction confirmed that Ga3+ substituted In3+ without any segregation over a wide range. The as-synthesized CuInxGa1xS2 nanoparticles showed narrow size distribution across the entire composition range (x = 01) and band gap tuned in the range from 1.44 to 2.28 eV. The morphology, structure, and optical properties of the synthesized nanoparticles were characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray diffraction (XRD), UVvisible (UVvis) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The mechanism of complex formation up to nanoparticle synthesis was also discussed.
引用
收藏
页码:24670 / 24679
页数:10
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