Features of mass transfer for the laminar melt flow along the interface

被引：10

作者：

Bykova, SV

Golyshev, VD

Gonik, MA

Tsvetovsky, VB

Frjazinov, IV

Marchenko, MP

机构：

[1] Ctr Thermophys Res Thermo, Aleksandrov 601650, Russia

[2] RAS, Inst Math Modeling, Moscow 117901, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 III期

关键词：

computer simulation; convection; mass transfer; growth from melt; microgravity conditions; semiconducting germanium;

D O I：

10.1016/S0022-0248(01)02211-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The possibility of obtaining the well-known weakly forced melt flow along the melt-crystal interface is studied. It is shown that the well-known laminar-forced melt flow can be provided during crystallization by a method of crystal growth in an axial heat flux Close to the phase interface (AHP method). The calculations of the 2D transient problem of crystal growth by the AHP method Under microgravity conditions showed that axial microaccelerations with amplitude less than 10(-3) g and a frequency of more than 0.01 Hz will have no influence on this flow. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1886 / 1891

页数：6

共 13 条

[1]

BURAGO NG, 1997, P 3 INT C CRYST GROW, V1, P239

[2]

Friazinov I.V., 1997, J COMPUT MATH MATH P, V37, P988

[3]

FRIAZINOV IV, 1994, MATH MODELLING, V6, P97

[4]

FRIAZINOV IV, 2001, P ICHMT S CHT 01 PAL, V2, P1137

[5]

FRJAZINOV IV, 2001, P 9 NAT RUSS C CRYST

[6]

Golyshev V.D., 1997, P JOINT 10 EUR 6 RUS, P158

[7]

Golyshev V. D., 1991, CRYST PROP PREP, V36, P623

[8] Problems of Bi4Ge3O12 and LiB4O7 single crystal growth by crusibleless variant of AHP method [J].

Golyshev, VD ;

Gonik, MA ;

Tsvetovsky, VB .

JOURNAL OF CRYSTAL GROWTH, 1999, 198 :501-506

[9]

KARPOV YM, 1985, Patent No. 1401931

[10]

KARPOV YM, 1984, Patent No. 1248330

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