The correct account of nonzero differential conductance in the saturation regime in the MOSFET compact model

被引:4
作者
Turin, Valentin [1 ]
Zebrev, Gennady [2 ]
Makarov, Sergey [3 ]
Iniguez, Benjamin [4 ]
Shur, Michael [5 ]
机构
[1] State Univ ESPC, Oryol 302020, Russia
[2] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia
[3] SYMICA Inc, UA-03187 Kiev, Ukraine
[4] Univ Rovira & Virgili, E-43007 Tarragona, Catalonia, Spain
[5] Rensselaer Polytech Inst, Troy, NY 12180 USA
基金
俄罗斯基础研究基金会;
关键词
compact model; MOSFET; self-heating effect; short-channel effects;
D O I
10.1002/jnm.1969
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We suggest a simple and versatile approach for the correct account of differential conductance in the saturation regime that provides a monotonic decrease of the differential conductance from its maximum value to its minimum positive or even negative value. We present all equations also in normalized form, which simplifies the analysis and usage of the approach. On the basis of the suggested approach, we have developed 'internal' (does not include source and drain resistance) metal-oxide-semiconductor field-effect transistor compact model and have incorporated one into an Electronic Design Automation software Symica as Verilog-A module. Copyright (C) 2014 John Wiley & Sons, Ltd.
引用
收藏
页码:863 / 874
页数:12
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