Dielectric Response of Filled High Temperature Vulcanized Silicone Rubber

被引：31

作者：

Gao, Yanfeng ^{[1
]}

Liang, Xidong ^{[1
]}

Dissado, L. A. ^{[2
]}

Dodd, S. J. ^{[2
]}

Chalashkanov, N. M. ^{[2
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R China

[2] Univ Leicester, Dept Engn, Leicester LE1 7RH, Leics, England

来源：

IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2016年 / 23卷 / 06期

关键词：

Dielectric response; HTV silicone rubber; Dissado-Hill theory; loss peak; quasi-dc; charge diffusion; interface; LOW-FREQUENCY DISPERSION; MODEL; CONDUCTIVITY; SPECTRA; LAW;

D O I：

10.1109/TDEI.2016.006057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dielectric response of three kinds of filled high temperature vulcanized (HTV) silicone rubber SiO2 based nanocomposite with different alumina tri-hydrate (ATH) micro-filler contents are investigated over a wide range of frequency and temperature. The results are analyzed in terms of the many-body Dissado-Hill dielectric response theory. In all three kinds of silicone rubber, a quasi-DC (QDC) process, a Dissado-Hill loss peak process and a diffusion process are observed. Specifically, the ATH filler contributes a QDC electrical transport/hopping process, which at higher temperatures causes the formation of a diffusion layer at the electrodes. The nano-SiO2 particles combined with rubber matrix give a Dissado-Hill loss peak dielectric relaxation. These two dispersion processes are shown to be associated with the interior interfaces of filled HTV silicone rubber. The effects of ATH filler content and temperature on the dielectric response are also analyzed in depth.

引用

页码：3683 / 3695

页数：13

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