Temperature and substrate influence on the structure of TiNxOy thin films grown by low pressure metal organic chemical vapour deposition

被引：43
作者：
Fabreguette, F
Imhoff, L
Guillot, J
Domenichini, B
de Lucas, MC
Sibillot, P
Bourgeois, S
Sacilotti, M
机构：
[1] Univ Bourgogne, CNRS, UPRESA 5027, Phys Lab, F-21078 Dijon, France
[2] Univ Bourgogne, CNRS, UMR 5613, Lab Rech Reactivite Solides, F-21078 Dijon, France
来源：
SURFACE & COATINGS TECHNOLOGY | 2000年 / 125卷 / 1-3期
关键词：
Rutherford backscattering spectroscopy; thin film; TiNxOy; X-ray diffraction; X-ray photoelectron spectroscopy;
D O I：
10.1016/S0257-8972(99)00588-5
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper presents the growth and characterization of titanium oxinitride (TiNxOy) films grown by low pressure metal organic chemical vapour deposition (LP-MOCVD). The film nitrogen content, obtained by Rutherford backscattering spectroscopy (RBS), increases as the growth temperature increases (from 23 at.% at 450 degrees C to 46 at.% at 750 degrees C). Below 550 degrees C, the films do not show any X-ray diffraction pattern. Above 550 degrees C, the deposited films present the (111) and (200) TiN textures. Films deposited on (100) Si exhibit a 2 theta shift to higher Bragg angles, depending on the N/O ratio. These shifts are explained by using a substitutional oxygen model. Moreover, the atomic structure of such materials is described from this behaviour in terms of lattice vacancies and N/O substitutions, leading to different titanium valencies confirmed by X-ray photoelectron spectroscopy (XPS) analysis. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：396 / 399
页数：4
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