Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution

被引:630
作者
Suh, Joonki [1 ]
Park, Tae-Eon [2 ]
Lin, Der-Yuh [3 ]
Fu, Deyi [1 ]
Park, Joonsuk [4 ]
Jung, Hee Joon [5 ]
Chen, Yabin [1 ]
Ko, Changhyun [1 ]
Jang, Chaun [2 ]
Sun, Yinghui [6 ]
Sinclair, Robert [4 ]
Chang, Joonyeon [2 ]
Tongay, Sefaattin [1 ]
Wu, Junqiao [1 ,6 ]
机构
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Korea Inst Sci & Technol, Spin Convergence Res Ctr, Seoul 136791, South Korea
[3] Natl Changhua Univ Educ, Dept Elect Engn, Changhua 50007, Taiwan
[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[5] Pacific NW Natl Lab, Energy & Environm Directorate, Richland, WA 99352 USA
[6] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
transition-metal dichalcogenides; molybdenum disulfide; substitutional doping; p-type MoS2; p-n junction; TRANSITION-METAL DICHALCOGENIDES; SINGLE-LAYER; 2-DIMENSIONAL SEMICONDUCTORS; INTEGRATED-CIRCUITS; MONOLAYER MOS2; LIGHT-EMISSION; HETEROSTRUCTURES; TRANSPORT; DIODES; PHOTOLUMINESCENCE;
D O I
10.1021/nl503251h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Layered transition metal dichalcogenides (TMDs) draw much attention as the key semiconducting material for two-dimensional electrical, optoelectronic, and spintronic devices. For most of these applications, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction. However, typically only one type of doping is stable for a particular TMD. For example, molybdenum disulfide (MoS2) is natively an n-type presumably due to omnipresent electron-donating sulfur vacancies, and stable/controllable p-type doping has not been achieved. The lack of p-type doping hampers the development of charge-splitting p-n junctions of MoS2, as well as limits carrier conduction to spin-degenerate conduction bands instead of the more interesting, spin-polarized valence bands. Traditionally, extrinsic p-type doping in TMDs has been approached with surface adsorption or intercalation of electron-accepting molecules. However, practically stable doping requires substitution of host atoms with dopants where the doping is secured by covalent bonding. In this work, we demonstrate stable p-type conduction in MoS2 by substitutional niobium (Nb) doping, leading to a degenerate hole density of similar to 3 x 10(19) cm(-3). Structural and X-ray techniques reveal that the Nb atoms are indeed substitutionally incorporated into MoS2 by replacing the Mo cations in the host lattice. van der Waals p-n homojunctions based on vertically stacked MoS2 layers are fabricated, which enable gate-tunable current rectification. A wide range of microelectronic, optoelectronic, and spintronic devices can be envisioned from the demonstrated substitutional bipolar doping of MoS2. From the miscibility of dopants with the host, it is also expected that the synthesis technique demonstrated here can be generally extended to other TMDs for doping against their native unipolar propensity.
引用
收藏
页码:6976 / 6982
页数:7
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