Investigation on Reduced Graphene Oxide for Radiation Sensing Application

被引：0

作者：

Shruthi, G. ^{[1
]}

Anshika ^{[1
]}

Baishali, G. ^{[1
]}

Nella, N. ^{[2
]}

Radhakrishna, V. ^{[3
]}

Rajanna, K. ^{[2
]}

机构：

[1] Dayananda Sagar Univ, Dept Phys, Bangalore, Karnataka, India

[2] Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore, Karnataka, India

[3] ISRO Satellite Ctr, Space Astron Grp, Bangalore, Karnataka, India

来源：

2018 IEEE SENSORS | 2018年

关键词：

Reduced graphene oxide; Field Effect Transistor; Raman spectroscopy; XRD; Scanning electron microscopy;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, reduced graphene oxide in field effect transistor architecture has been explored for the detection of ionizing radiation. The reduced graphene oxide is prepared from Graphene oxide through thermal annealing at low temperature under vacuum environment. The technical approach is to utilize the sensitive dependence of the electrical conductivity of graphene-based compounds on a local electric field, which can be abruptly changed by the charge carriers produced by radiation absorbed in the underlying absorber material

引用

页码：916 / 919

页数：4

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