Evaluation of quantum efficiency of porous silicon photoluminescence

被引：20

作者：

Skryshevsky, VA ^{[1
]}

Laugier, A ^{[1
]}

Strikha, VI ^{[1
]}

Vikulov, VA ^{[1
]}

机构：

[1] INST NATL SCI APPL,PHYS MAT LAB,URA CNRS 358,F-69621 VILLEURBANNE,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 40卷 / 01期

关键词：

porous silicon; photoluminescence; solar cell;

D O I：

10.1016/0921-5107(96)01572-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of photoluminescence of top porous silicon layer on deep p-n junction photocurrent is studied. The measurement of additional photocurrent caused by adsorption of porous silicon emission is shown to allow evaluation of the external quantum efficiency of photoluminescence. This can reach approximately 4% on n-Si upon illumination by the short wavelength tail of air mass (AM) 1.5 spectra.

引用

页码：54 / 57

页数：4

共 13 条

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