Influence of low energy ballistic electron on the transmittance properties of Au/Si interface studied by ballistic-electron-emission microscope

被引:1
|
作者
Qiu, XH [1 ]
Shang, GY [1 ]
Wang, C [1 ]
Wang, NX [1 ]
Bai, CL [1 ]
机构
[1] CHINESE ACAD SCI,INST CHEM,BEIJING 100080,PEOPLES R CHINA
来源
CHINESE SCIENCE BULLETIN | 1997年 / 42卷 / 15期
关键词
Au/Si interface; ballistic-electron-emission microscopy; transmittance probability;
D O I
10.1007/BF02882760
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
[No abstract available]
引用
收藏
页码:1282 / 1286
页数:5
相关论文
共 8 条
  • [2] Ballistic-electron-emission microscopy on epitaxial silicides
    von Kanel, H
    Meyer, T
    Klemenc, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (6B): : 3800 - 3804
  • [3] Ballistic electron emission microscopy and spectroscopy of the Au/GaAs(110) interface
    Stockman, L
    van Kempen, H
    SURFACE SCIENCE, 1998, 408 (1-3) : 232 - 236
  • [4] Hot-electron transport processes in ballistic-electron emission microscopy at Au-Si interfaces
    Dähne-Prietsch, M
    Kalka, T
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2000, 109 (1-2) : 211 - 222
  • [5] Ballistic electron emission microscopy studies of inhomogeneity in Au/CaF2/n-Si(111) interfaces
    Sumiya, T
    Fujinuma, H
    Miura, T
    Tanaka, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (8A): : L996 - L999
  • [6] Comparison of au contacts to Si, GaAs, InxGa1-xP, and ZnSe measured by ballistic electron emission microscopy
    Morgan, BA
    Talin, AA
    Bi, WG
    Kavanagh, KL
    Williams, RS
    Tu, CW
    Yasuda, T
    Yasui, T
    Segawa, Y
    MATERIALS CHEMISTRY AND PHYSICS, 1996, 46 (2-3) : 224 - 229
  • [7] An inexpensive up-gradation of scanning tunneling microscope for ballistic electron emission microscopy and spectroscopy
    Gangopadhyay, S
    Kar, AK
    Ray, SK
    Mathur, BK
    APPLIED SURFACE SCIENCE, 2000, 156 (1-4) : 183 - 188
  • [8] Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(100) diodes formed by solid phase reaction
    Zhu, SY
    Qu, XP
    Van Meirhaeghe, RL
    Detavernier, C
    Ru, GP
    Cardon, F
    Li, BZ
    SOLID-STATE ELECTRONICS, 2000, 44 (12) : 2217 - 2223