Thermal transport in semiconductor nanostructures, graphene, and related two-dimensional materials

被引：19
|
作者：
Cocemasov, Alexandr I. [1 ]
Isacova, Calina I. [1 ]
Nika, Denis L. [1 ]
机构：
[1] Moldova State Univ, Dept Phys & Engn, E Pokatilov Lab Phys & Engn Nanomat, MD-2009 Kishinev, Moldova
来源：
CHINESE PHYSICS B | 2018年 / 27卷 / 05期
关键词：
phonons; thermal conductivity; nanowire; graphene; two-dimensional (2D) materials; CONFINED ACOUSTIC PHONONS; BLACK PHOSPHORUS; SILICON NANOWIRES; BILAYER GRAPHENE; QUANTUM-WELL; CONDUCTIVITY; ENHANCEMENT; MOBILITY; HEAT; MOS2;
D O I：
10.1088/1674-1056/27/5/056301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We review experimental and theoretical results on thermal transport in semiconductor nanostructures (multilayer thin films, core/shell and segmented nanowires), single- and few-layer graphene, hexagonal boron nitride, molybdenum disulfide, and black phosphorus. Different possibilities of phonon engineering for optimization of electrical and heat conductions are discussed. The role of the phonon energy spectra modification on the thermal conductivity in semiconductor nanostructures is revealed. The dependence of thermal conductivity in graphene and related two-dimensional (2D) materials on temperature, flake size, defect concentration, edge roughness, and strain is analyzed.
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页数：9
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