Anisotropic magnetoresistive sensors of the magnetic field and current

被引：2

作者：

Kasatkin, S. I. ^{[1
]}

Murav'ev, A. M. ^{[1
]}

Plotnikova, N. V. ^{[1
]}

Amelichev, V. V. ^{[2
]}

Galushkov, A. I. ^{[2
]}

Gamarts, I. A. ^{[2
]}

Lopatin, V. V. ^{[2
]}

Saurov, A. N. ^{[2
]}

机构：

[1] Russian Acad Sci, Trapeznikov Inst Control Sci, Moscow, Russia

[2] MIET, Sci Prod Complex Technol Ctr, Moscow, Russia

来源：

AUTOMATION AND REMOTE CONTROL | 2009年 / 70卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

42.81.Pa;

D O I：

10.1134/S0005117909060101

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Results are presented of the work in the domain of investigation and production of thin-filmed anisotropic magnetoresistive sensors (AMRSs) of the magnetic field and current on the basis of the single-layer or the double-layer metallic ferromagnetic nanostructure with a thickness of the magnetic film of 12-25 nm. The problems of design of the AMRS structures and their efficiency are considered with the investigation of the basic characteristics and technology of their production.

引用

页码：1043 / 1053

页数：11