HIGH PERFORMANCE SWIR HgCdTe FPA DEVELOPMENT ON SILICON SUBSTRATES

被引：13

作者：

Bommena, R. ^{[1
]}

Bergeson, J. D. ^{[1
]}

Kodama, R. ^{[1
]}

Zhao, J. ^{[1
]}

Ketharanathan, S. ^{[1
]}

Schaake, H. ^{[1
]}

Shih, H. ^{[1
]}

Velicu, S. ^{[1
]}

Aqariden, F. ^{[1
]}

Wijewarnasuriya, P. S. ^{[2
]}

Dhar, N. K. ^{[3
]}

机构：

[1] EPIR Technol Inc, Bolingbrook, IL 60440 USA

[2] Army Res Lab, Adelphi, MD USA

[3] DARPA, MTO, Arlington, VA USA

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XL | 2014年 / 9070卷

关键词：

MBE; HgCdTe; SWIR; Silicon; CdTe; Dark Current; Quantum Efficiency; FPA;

D O I：

10.1117/12.2053020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the development of high performance low cost SWIR infrared detectors from MBE-grown HgCdTe on 3-inch CdTe-buffered silicon substrates. The experimental findings demonstrate that despite the large lattice mismatch between HgCdTe and Si substrate, the materials and detector performances are sufficiently better than those reported for III-V mixed crystals. High minority carrier lifetime of the order 3 mu s at room temperature was measured on the as grown material. Photodetectors fabricated from this material produced low dark current densities on the order of 10(-6) A/cm(2) and 10(-3) A/cm(2) at 200K and 300K. Quantum efficiency exceeding 70% at 2.0 mu m, without antireflective coating, was measured on single element detectors. Further, 320 X 256, 30 mu m pitch FPA's have been fabricated with this HgCdTe on Si material and dark current operability of similar to 99.5% (mean dark current of 30 pA/Pixel) at 200K has been demonstrated.

引用

页数：12

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