Defect-aware process margin for chemo-epitaxial directed self-assembly lithography using simulation method based on self-consistent field theory

被引：4

作者：

Kodera, Katsuyoshi ^{[1
]}

Sato, Hironobu ^{[1
]}

Kanai, Hideki ^{[1
]}

Seino, Yuriko ^{[1
]}

Kihara, Naoko ^{[1
]}

Kasahara, Yusuke ^{[1
]}

Kobayashi, Katsutoshi ^{[1
]}

Miyagi, Ken ^{[1
]}

Minegishi, Shinya ^{[1
]}

Yatsuda, Koichi ^{[1
]}

Fujiwara, Tomoharu ^{[1
]}

Hirayanagi, Noriyuki ^{[1
]}

Kawamonzen, Yoshiaki ^{[1
]}

Azuma, Tsukasa ^{[1
]}

机构：

[1] EUVL Infrastruct Dev Ctr Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES VI | 2014年 / 9049卷

关键词：

directed self-assembly; lithography; self-consistent field theory; defect analysis; defect-aware process margin; COPOLYMERS;

D O I：

10.1117/12.2046159

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We proposed a new concept of "defect-aware process margin." Defect-aware process margin was evaluated by investigating the energy difference between the free-energy of the most stable state and that of the first metastable state. The energy difference is strongly related to the defect density in DSA process. As a result of our rigorous simulations, the process margin of the pinning layer width was found to be: (1) worse when the pinning layer affinity is too large, (2) better when the background affinity has the opposite sign of the pinning layer affinity, and (3) better when the top of the background layer is higher than that of the pinning layer by 0.1L(0).

引用

页数：8

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