Development of Cu CMP Slurry with High Throughput and Low Dishing

被引：7

作者：

Jing, Jianfen ^{[1
]}

Wang, Yuchun ^{[1
]}

Zhang, Jian ^{[1
]}

Cai, Xinyuan ^{[1
]}

Wang, Xucheng ^{[1
]}

Xu, Yanting ^{[1
]}

Shi, Fengjun ^{[1
]}

机构：

[1] Anji Microelect Shanghai Co Ltd, Shanghai 201203, Peoples R China

来源：

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013) | 2013年 / 52卷 / 01期

关键词：

D O I：

10.1149/05201.0569ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

To follow the Moore's law, the advanced Cu slurry needs to continue the trend of cost reduction and performance improvement at the same time. With the technology node shrinking, there is a need to develop a Cu slurry with fast rate for high throughput and low dishing for minimal within die and within wafer variation, and stringent defect requirement such as residue, corrosion, and micro scratches. In this paper, we introduce a high performance Cu CMP slurry to overcome these performance challenges in Cu CMP process. The impact of slurry formulation on the slurry performance will be presented under different process conditions, including blanket removal rates/profiles, static etch rates, dishing, Cu residue clearance capability and corrosion status. Electrochemical study was also conducted to support the results and performance. With the optimized formulation and polishing process, the slurry achieves dishing under 300A at near 1 um Cu polishing rate. For multiple layers stacking, the slurry also has tunable dishing to provide a wide process integration window.

引用

页码：569 / 574

页数：6