Dual emissive Sn(1-2x) Cux Cox O2 nanostructures - A correlation study of doping concentration on structural, optical and electrical properties

被引:2
作者
Baraneedharan, P. [1 ]
Siva, C. [1 ]
Saranya, A. [2 ]
Jayavel, R. [2 ]
Nehru, K. [3 ]
Sivakumar, M. [1 ]
机构
[1] Anna Univ, Div Nanosci & Technol, Tiruchirappalli 620024, Tamil Nadu, India
[2] Anna Univ, Ctr Nanosci & Technol, Chennai 600025, Tamil Nadu, India
[3] Anna Univ, Dept Chem, Tiruchirappalli 620024, Tamil Nadu, India
关键词
Doping; Peak shift; Absorption edge; Oxygen vacancies; SNO2; NANOPARTICLES; PHOTOLUMINESCENCE PROPERTIES; THIN-FILMS; MICROSTRUCTURE; LUMINESCENCE; GROWTH; MN;
D O I
10.1016/j.spmi.2013.12.029
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A simplistic chemical co-precipitation route was adapted to synthesize Sn(1-2x) Cu-x Co-x O-2 (x = 0, 0.01 and 0.03) nanoparticles. The structural studies were carried out using X-ray diffraction pattern and the shift in diffraction peak, lattice constant and particle size with doping concentration was determined. The morphology of nanoparticles with an average size of 13-18 nm was observed using high-resolution transmission electron microscopy. A significant increase in the absorption edge with an increase in doping concentration was observed using ultraviolet-visible absorption spectroscopy. Further, the blue-shifted band gap value was plotted using Tauc's relation. The near-band-edge emission at 3.9 eV and the deep-level-emission at 2.4 eV were systematically examined by photoluminescence spectroscopy. The dependence of doping concentration on temperature-reliant electrical conductivity was examined using DC electrical measurements. A meticulous exploration on diffraction peak shift, the Burstein-Moss shift, the mechanism for dual emission and the decreased electrical conductivity in Sn(1-2x) Cu-x Co-x O-2 nanostructures were further discussed. (C) 2014 Elsevier Ltd. All rights reserved.
引用
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页码:66 / 75
页数:10
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