p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111)

被引：63
|
作者：
Deng, Tianguo [1 ]
Sato, Takuma [1 ]
Xu, Zhihao [1 ]
Takabe, Ryota [1 ]
Yachi, Suguru [1 ]
Yamashita, Yudai [1 ]
Toko, Kaoru [1 ]
Suemasu, Takashi [1 ]
机构：
[1] Univ Tsukuba, Inst Appl Phys, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan
来源：
APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 06期
关键词：
SEMICONDUCTING SILICIDE BA1-XSRXSI2; BARIUM SILICIDE; BASI2;
D O I：
10.7567/APEX.11.062301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
B-doped p-BaSi2 epitaxial layers with a hole concentration of 1.1 x 10(18) cm(-3) were grown on n-Si(001) using molecular beam epitaxy to fabricate p-BaSi2/n-Si solar cells. The thickness (d) of the p-BaSi2 layer was varied from 20 to 60 nm to investigate its effect on the solar cell performance. The conversion efficiency under an AM1.5 illumination increased with d reaching a maximum of 9.8% at d = 40 nm, which is nearly equal to the highest efficiency (9.9%) for p-BaSi2/n-Si solar cells on Si(111). This study indicated that Si(001) substrates are promising for use in BaSi2 solar cells. (C) 2018 The Japan Society of Applied Physics
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页数：5
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