p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111)

被引：64

作者：

Deng, Tianguo ^{[1
]}

Sato, Takuma ^{[1
]}

Xu, Zhihao ^{[1
]}

Takabe, Ryota ^{[1
]}

Yachi, Suguru ^{[1
]}

Yamashita, Yudai ^{[1
]}

Toko, Kaoru ^{[1
]}

Suemasu, Takashi ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 06期

关键词：

SEMICONDUCTING SILICIDE BA1-XSRXSI2; BARIUM SILICIDE; BASI2;

D O I：

10.7567/APEX.11.062301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

B-doped p-BaSi2 epitaxial layers with a hole concentration of 1.1 x 10(18) cm(-3) were grown on n-Si(001) using molecular beam epitaxy to fabricate p-BaSi2/n-Si solar cells. The thickness (d) of the p-BaSi2 layer was varied from 20 to 60 nm to investigate its effect on the solar cell performance. The conversion efficiency under an AM1.5 illumination increased with d reaching a maximum of 9.8% at d = 40 nm, which is nearly equal to the highest efficiency (9.9%) for p-BaSi2/n-Si solar cells on Si(111). This study indicated that Si(001) substrates are promising for use in BaSi2 solar cells. (C) 2018 The Japan Society of Applied Physics

引用

页数：5

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