Performances of novel Pd/Sn and Pd/Sn/Au ohmic metallizations to n-GaAs

被引：1
作者：
Islam, MS [1 ]
Huda, MQ
Alam, AHMZ
McNally, PJ
机构：
[1] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh
[2] Dublin City Univ, Sch Elect Engn, Microelect Res Lab, Dublin 9, Ireland
来源：
MICROELECTRONIC ENGINEERING | 2002年 / 60卷 / 3-4期
关键词：
metallizations; Ohmic contacts; GaAs; metal-semiconductor field-effect transistor; Pd-based contacts; surface morphology;
D O I：
10.1016/S0167-9317(01)00706-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Performance of novel Pd/Sn and Pd/Sn/Au Ohmic metallizations to n-GaAs have been investigated. Metallizations were deposited using a resistance heating evaporator and annealings were performed utilizing a conventional graphite strip annealer (cGSA). Metallization samples were characterized using scanning tunneling microscopy (STM), secondary ion mass spectrometry (SIMS) and current-voltage (I-V) measurements. Contact resistivities, rho(c), of the metallizations were measured utilizing conventional transmission line model (cTLM) method. Novel Pd/Sn and Pd/Sn/Au Ohmic contacts exhibit better thermal stability compared to non-alloyed Pd/Ge metallization. In order to investigate the effectiveness of novel Pd/Sn and Pd/Sn/Au Ohmic metallizations in device applications, gallium arsenide metal-semiconductor field-effect transistors (GaAs MESFETs) have been fabricated. MESFETs fabricated with Pd/Sn/Au Ohmic contacts show a extrinsic transconductance, g(me), of more than 133 mS/mm for a gate length, L-G, of 2 mum. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：457 / 467
页数：11
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