Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission

被引：13
作者：
Aldabergenova, S. B.
Frank, G.
Strunk, H. P.
Maqbool, M.
Richardson, H. H.
Kordesch, M. E.
机构：
[1] Univ Erlangen Nurnberg, Inst Microcharacterizat, D-91058 Erlangen, Germany
[2] Ohio Univ, Clippinger Labs, Dept Phys & Astron, Athens, OH 45701 USA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期
关键词：
amorphous semiconductors; composition; nanocrystals; electron diffraction/scattering; Raman scattering; TEM/STEM; microcrystallinity; luminescence; rare-earths in glasses; short-range order;
D O I：
10.1016/j.jnoncrysol.2005.11.120
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated the optical activity of Ho3+ ions in AlN layers in the as prepared and annealed states. The films were grown using RF magnetron sputtering in a pure nitrogen atmosphere. After annealing we observe strong characteristic Ho3+ emission peaks at 549, 660 and 760 nm corresponding to the S-5(2) -> I-5(8), F-5(5) -> I-5(8) and I-5(4) -> I-5(8) transitions, respectively. The emission peak at around 692 nm corresponds to the Cr3+ emission (Cr is an unintentional dopant). A strong increase in Ho3+ emission intensity and activation of Cr3+ ions are accompanied by enhanced oxygen and other defect related luminescence. The structural analysis shows that during annealing new AlN crystallites form in the initially mostly amorphous AlN matrix. (c) 2006 Elsevier B.V. All rights reserved.
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页码：1290 / 1293
页数：4
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