Optical properties and polarization fields in the nitrides

被引：18

作者：

Hangleiter, A ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Tech Phys, D-38106 Braunschweig, Germany

来源：

JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷

关键词：

III-nitrides; piezoelectricity; spontaneous polarization; quantum wells; optical properties;

D O I：

10.1016/S0022-2313(99)00246-X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Spontaneous and piezoelectric polarization fields are shown to be the key to understanding the optical properties of nitride heterostructures. The emission energy, the oscillator strength, the emission line width, and the shift between spontaneous emission and absorption of nitride quantum wells are decisively influenced by piezoelectric fields. Spontaneous polarization fields. which are normally screened by surface charges, are unveiled by manipulating the surface coverage with an electron beam. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：130 / 134

页数：5

共 20 条

[1] Cathodoluminescence dependence upon irradiation time
Achour, S
Harabi, A
Tabet, N
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3): : 289 - 292
[2] Spontaneous polarization and piezoelectric constants of III-V nitrides
Bernardini, F
Fiorentini, V
Vanderbilt, D
[J]. PHYSICAL REVIEW B, 1997, 56 (16): : 10024 - 10027
[3] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
Chichibu, S
Azuhata, T
Sota, T
Nakamura, S
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (27) : 4188 - 4190
[4] GFORER O, 1999, P 3 INT C NITR SEM M
[5] Gfrörer O, 1999, PHYS STATUS SOLIDI B, V216, P405, DOI 10.1002/(SICI)1521-3951(199911)216:1<405::AID-PSSB405>3.0.CO
[6] 2-#
[7] Hangleiter A, 1998, MRS INTERNET J N S R, V3
[8] HOLLMER H, 1999, APPL PHYS LETT, V74, P82
[9] Effects of piezoelectric fields in GaInN/GaN and GaN/AlGaN heterostructures and quantum wells
Im, JS
Kollmer, H
Off, J
Sohmer, A
Scholz, F
Hangleiter, A
[J]. NITRIDE SEMICONDUCTORS, 1998, 482 : 513 - 518
[10] Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells
Im, JS
Kollmer, H
Off, J
Sohmer, A
Scholz, F
Hangleiter, A
[J]. PHYSICAL REVIEW B, 1998, 57 (16) : R9435 - R9438

← 1 2 →