Low-temperature dielectric anomaly in Bi0.5K0.5TiO3

被引：5
作者：
Wei, Yongxing [1 ]
Zhang, Ning [1 ]
Xu, Gang [1 ]
Jin, Changqing [1 ]
Hu, Lin [1 ]
Gao, Ling [1 ]
Jian, Zengyun [1 ]
Zhu, Weitong [2 ,3 ]
机构：
[1] Xian Technol Univ, Sch Mat & Chem Engn, Shaanxi Key Lab Optoelect Funct Mat & Devices, Xian 710021, Shaanxi, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Elect Mat Res Lab, Key Lab Minist Educ, Xian 710021, Shaanxi, Peoples R China
[3] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Int Ctr Dielect Res, Xian 710021, Shaanxi, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2019年 / 125卷 / 09期
基金：
中国国家自然科学基金;
关键词：
ULTRAHIGH PIEZOELECTRICITY; RELAXOR; CERAMICS; K0.5BI0.5TIO3; TRANSITION;
D O I：
10.1007/s00339-019-2930-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Here, we report our studies on Bi0.5K0.5TiO3 (BKT) prepared by conventional solid-state reaction method and two-step sintering method to further understand the dielectric dispersion around room temperature. The coexistence of the tetragonal and cubic phases is confirmed. Most importantly, we find an extra dielectric loss anomaly around -100 degrees C. The polarization response suggests the contribution of the hysteresis-free polarization. Correspondingly, a Raman-active mode around 75 cm(-1) is frozen on cooling. A model is proposed to interpret the origin of the low-temperature dielectric anomaly.
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页数：6
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