A 120 Watt GaN Power Amplifier MMIC Utilizing Harmonic Tuning Circuits For S-band Applications

被引：0

作者：

Alexander, Andrew ^{[1
]}

Leckey, Jonathan ^{[1
]}

机构：

[1] MA COM Technol Solut, Belfast, Antrim, North Ireland

来源：

2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2015年

关键词：

GaN HEMT; MMIC; Power Amplifier;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

The design of a 120 Watt S-band GaN power amplifier MMIC is presented. The amplifier was designed using the 0.25um GaN on SiC process from GCS. At Vds=40V, this two stage amplifier achieved greater than 135W saturated output power, with higher than 47% power added efficiency and with 22dB gain in the 2.8 - 3.5 GHz band. Additionally mid band output power of 195W was achieved at Vds=50V. This result is the highest power ever reported for a two stage GaN MMIC. The use of input and output harmonic terminations for broadband efficiency enhancement was demonstrated.

引用

页数：3