A 120 Watt GaN Power Amplifier MMIC Utilizing Harmonic Tuning Circuits For S-band Applications

被引：0
|
作者：
Alexander, Andrew [1 ]
Leckey, Jonathan [1 ]
机构：
[1] MA COM Technol Solut, Belfast, Antrim, North Ireland
来源：
2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2015年
关键词：
GaN HEMT; MMIC; Power Amplifier;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
The design of a 120 Watt S-band GaN power amplifier MMIC is presented. The amplifier was designed using the 0.25um GaN on SiC process from GCS. At Vds=40V, this two stage amplifier achieved greater than 135W saturated output power, with higher than 47% power added efficiency and with 22dB gain in the 2.8 - 3.5 GHz band. Additionally mid band output power of 195W was achieved at Vds=50V. This result is the highest power ever reported for a two stage GaN MMIC. The use of input and output harmonic terminations for broadband efficiency enhancement was demonstrated.
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页数：3
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