Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs

被引：41

作者：

Aichinger, T. ^{[1
]}

Schmidt, M. ^{[2
]}

机构：

[1] Infineon Technol Austria AG, Technol Dev SiC, Siemensstr 2, A-9500 Villach, Austria

[2] Infineon Technol AG, Reliabil & Qualificat, Campeon 1-15, D-85579 Neubiberg, Germany

来源：

2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2020年

关键词：

Dielectric breakdown; Semiconductor device reliability; Silicon carbide; Power MOSFET; Weibull distribution;

D O I：

10.1109/irps45951.2020.9128223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss various gate-oxide reliability aspects of silicon carbide (SiC) MOSFETs and highlight similarities and differences of SiC and silicon (Si) technology. Basic concepts of electrical gate-oxide defect screening are introduced and failure probability and the failure-rate after screening is studied based on Weibull statistics. To be able to quantify very low extrinsic failure probabilities (e.g. after electrical screening), we present a new kind of test procedure which we call the "marathon stress test". The results of this test demonstrate that excellent gate-oxide reliability of commercially available SiC trench MOSFETs can be achieved after applying a sufficiently precise electrical screening.

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