Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature

被引：62

作者：

Shaban, Mahmoud ^{[1
,2
]}

Nomoto, Keita ^{[1
]}

Izumi, Shota ^{[1
]}

Yoshitake, Tsuyoshi ^{[1
]}

机构：

[1] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan

[2] S Valley Univ, Aswan Fac Engn, Dept Elect Engn, Aswan 81542, Egypt

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 22期

关键词：

elemental semiconductors; iron compounds; photodetectors; photodiodes; rectification; scanning electron microscopy; semiconductor heterojunctions; semiconductor thin films; silicon; sputter deposition; LIGHT-EMITTING DIODE; 1.5 MU M; PHOTOVOLTAIC PROPERTIES; SILICON; SI(111); GROWTH; FILMS;

D O I：

10.1063/1.3151915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

n-type beta-FeSi2/p-type Si heterojunctions were fabricated from beta-FeSi2 films epitaxially grown on Si(111) by facing-target direct-current sputtering. Sharp film-substrate interfaces were confirmed by scanning electron microscopy. The current-voltage and photoresponse characteristics were measured at room temperature. They exhibited good rectifying properties and a change of approximately one order of magnitude in the current at a bias voltage of -1 V under illumination by a 6 mW, 1.31 mu m laser. The estimated detectivity was 1.5x10(9) cm root Hz W at 1.31 mu m. The results suggest that the beta-FeSi2/Si heterojunctions can be used as near-infrared photodetectors that are compatible with silicon integrated circuits.

引用

页数：3

共 14 条

[1] Growth of β-FeSi2 thin film on Si (111) by metal-organic chemical vapor deposition [J].