A Statistical Study of Magnetic Tunnel Junctions for High-Density Spin Torque Transfer-MRAM (STT-MRAM)

被引：0

作者：

Beach, R. ^{[1
]}

Min, T. ^{[1
]}

Horng, C. ^{[1
]}

Chen, Q. ^{[1
]}

Sherman, P. ^{[1
]}

Le, S. ^{[1
]}

Young, S. ^{[1
]}

Yang, K. ^{[1
]}

Yu, H. ^{[1
]}

Lu, X. ^{[1
]}

Kula, W. ^{[1
]}

Zhong, T. ^{[1
]}

Xiao, R. ^{[1
]}

Zhong, A. ^{[1
]}

Liu, G. ^{[1
]}

Kan, J. ^{[1
]}

Yuan, J. ^{[1
]}

Chen, J. ^{[1
]}

Tong, R. ^{[1
]}

Chien, J. ^{[1
]}

Torng, T. ^{[1
]}

Tang, D. ^{[1
]}

Wang, P. ^{[1
]}

Chen, M. ^{[1
]}

Assefa, S. ^{[2
]}

Qazi, M. ^{[3
]}

DeBrosse, J. ^{[3
]}

Gaidis, M. ^{[2
]}

Kanakasabapathy, S. ^{[2
]}

Lu, Y. ^{[2
]}

Nowak, J. ^{[2
]}

O'Sullivan, E. ^{[2
]}

Maffitt, T. ^{[3
]}

Sun, J. Z. ^{[2
]}

Gallagher, W. J. ^{[2
]}

机构：

[1] MagIC Technol Inc, MagIC IBM MRAM Alliance, Milpitas, CA 95035 USA

[2] IBM Res, Yorktown Hts, NY 10598 USA

[3] IBM Syst & Technol Grp, Essex Jct 05452, VT USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated a robust magnetic tunnel junction (MTJ) with a resistance-area product RA=8 Omega-mu m(2) that simultaneously satisfies the statistical requirements of high tunneling magnetoresistance TMR > 15 sigma(R-p), write threshold spread sigma(Vw)/< Vw > <7.1%, breakdown-to-write voltage margin over 0.5V, read-induced disturbance rate below 10(-9), and sufficient write endurance, and is free of unwanted write-induced magnetic reversal. The statistics suggest that a 64Mb chip at the 90-nm node is feasible.

引用

页码：305 / +

页数：3

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