Doping selective lateral electrochemical etching of GaN for chemical lift-off

被引:92
作者
Park, Joonmo [1 ]
Song, Kwang Min [1 ]
Jeon, Seong-Ran [2 ]
Baek, Jong Hyeob [2 ]
Ryu, Sang-Wan [1 ]
机构
[1] Chonnam Natl Univ, Dept Phys, Kwangju 500757, South Korea
[2] Korea Photon Technol Inst, Kwangju 97135, South Korea
关键词
electrochemistry; elemental semiconductors; etching; gallium compounds; III-V semiconductors; semiconductor doping; semiconductor epitaxial layers; silicon; wide band gap semiconductors; LIGHT-EMITTING-DIODES; FILMS;
D O I
10.1063/1.3153116
中图分类号
O59 [应用物理学];
学科分类号
摘要
An electrochemical etching based on oxalic acid was developed for use in the chemical lift-off of GaN epitaxial structures. It was shown that only the Si-doped n-GaN layer was etched away, while the p-type and undoped GaN layers were not etched at all. The etch rate and the remaining structure were analyzed for various doping concentrations and etching voltages. A lateral etch rate of 12 mu m/min was achieved under 60 V for n-type doping concentration of 8x10(18) cm(-3). This doping selective etching was used to lift-off a GaN epitaxial layer patterned into 300x300 mu m(2) squares.
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页数:3
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