Effect of the a-SiC:H thickness in the conduction mechanisms of a-SiC:H/c-Si heterojunction diodes

被引：0

作者：

Cabré, R ^{[1
]}

Pallarès, J ^{[1
]}

Marsal, LF ^{[1
]}

机构：

[1] Univ Rovira & Virgili, Dept Elect Engn, Tarragona 43007, Spain

来源：

2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2 | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conduction mechanisms governing the dark current-voltage characteristics of a-SiC:H/a-Si:H/c-Si pin heterojunction diodes are determined by the use of an electrical model. In particular, the influence of the a-SiC:H thickness layer on the conduction mechanisms is studied. For a 5 nm thick a-SiC:H layer, the conduction mechanisms of the heterojunction diode are the same than a homojunction Silicon diode.

引用

页码：287 / 290

页数：4

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