Stacking faults and twin boundaries in fcc crystals determined by x-ray diffraction profile analysis

被引:247
作者
Balogh, Levente [1 ]
Ribarik, Gabor [1 ]
Ungar, Tamas [1 ]
机构
[1] Eotvos Lorand Univ, Dept Mat Phys, Inst Phys, H-1518 Budapest, Hungary
基金
匈牙利科学研究基金会;
关键词
D O I
10.1063/1.2216195
中图分类号
O59 [应用物理学];
学科分类号
摘要
A systematic procedure is developed to evaluate the density of planar defects together with dislocations and crystallite or subgrain size by x-ray line profile analysis in fcc crystals. Powder diffraction patterns are numerically calculated by using the DIFFAX software for intrinsic and extrinsic stacking faults, and twin boundaries for the first 15 Bragg reflections up to 20% fault density. It is found that the Bragg reflections consist of five subreflection types categorized by specific selection rules for the hkl indices in accordance with the theory of Warren [Prog. Met. Phys. 8, 147 (1959)]. It is shown that the profiles of the subreflections are Lorentzian-type functions. About 15 000 subreflections are evaluated for their full widths of half maxima and their positions relative to the exact Bragg angle. These values are parametrized as a function of the density and type of planar faults. A whole profile fitting procedure, previously worked out for determining the dislocation structure and crystallite size distributions, is extended for planar fault by including these data into the software. The method is applied to evaluate twin densities in nanocrystalline and submicron grain-size copper specimens. It is found that twinning becomes substantial under a critical crystallite or subgrain size of about 40 nm, in accordance with other observations.
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页数:10
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共 47 条
  • [1] [Anonymous], 1962, XRAY OPTICS DIFFRACT
  • [2] Deformation mechanism transitions in nanoscale fcc metals
    Asaro, RJ
    Krysl, P
    Kad, B
    [J]. PHILOSOPHICAL MAGAZINE LETTERS, 2003, 83 (12) : 733 - 743
  • [3] Calculation of deformation behavior and texture evolution during equal channel angular pressing of IF steel using dislocation based modeling of strain hardening
    Baik, SC
    Estrin, Y
    Kim, HS
    Jeong, HT
    Hellmig, RJ
    [J]. TEXTURES OF MATERIALS, PTS 1 AND 2, 2002, 408-4 : 697 - 702
  • [4] Computer program ANIZC for the calculation of diffraction contrast factors of dislocations in elastically anisotropic cubic, hexagonal and trigonal crystals
    Borbély, A
    Dragomir-Cernatescu, J
    Ribárik, G
    Ungár, T
    [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2003, 36 : 160 - 162
  • [5] Plastic deformation with reversible peak broadening in nanocrystalline nickel
    Budrovic, Z
    Van Swygenhoven, H
    Derlet, PM
    Van Petegem, S
    Schmitt, B
    [J]. SCIENCE, 2004, 304 (5668) : 273 - 276
  • [6] Deformation twinning in nanocrystalline aluminum
    Chen, MW
    Ma, E
    Hemker, KJ
    Sheng, HW
    Wang, YM
    Cheng, XM
    [J]. SCIENCE, 2003, 300 (5623) : 1275 - 1277
  • [7] Stacking faults in the structure of nickel hydroxide: a rationale of its high electrochemical activity
    Delmas, C
    Tessier, C
    [J]. JOURNAL OF MATERIALS CHEMISTRY, 1997, 7 (08) : 1439 - 1443
  • [8] Stacking fault analysis in layered materials
    Dittrich, H
    Wohlfahrt-Mehrens, M
    [J]. INTERNATIONAL JOURNAL OF INORGANIC MATERIALS, 2001, 3 (08): : 1137 - 1142
  • [9] QUANTITATIVE ANALYSIS OF PLANAR FAULTING
    Estevez-Rams, E.
    Lora-Serrano, R.
    Penton-Madrigal, A.
    Fuess, H.
    [J]. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2002, 58 : C233 - C233
  • [10] On the powder diffraction pattern of crystals with stacking faults
    Estevez-Rams, E
    Leoni, M
    Scardi, P
    Aragon-Fernandez, B
    Fuess, H
    [J]. PHILOSOPHICAL MAGAZINE, 2003, 83 (36) : 4045 - 4057