Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements

被引：38

作者：

Chini, A. ^{[1
]}

Esposto, M. ^{[1
]}

Meneghesso, G. ^{[2
]}

Zanoni, E. ^{[2
]}

机构：

[1] Univ Modena & Reggio Emilia, Dept Informat Engn, I-41100 Modena, Italy

[2] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

来源：

ELECTRONICS LETTERS | 2009年 / 45卷 / 08期

关键词：

D O I：

10.1049/el.2009.0533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of short-term step-stress on the performance of GaN HEMTs have been evaluated for the first time by means of current deep-level-transient-spectroscopy (DLTS) measurements. When subjected to high reverse gate bias the devices experienced an increase in the drain current dispersion as well as in the gate current. Current DLTS measurements carried out during the stress experiment show that the device degradation can be associated to the formation of a defect that is thermally activated with an energy of 0.5 eV.

引用

页码：426 / U61

页数：2

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