Surface compositional mapping of self-assembled InAs/GaAs quantum rings

被引：6
作者：
Biasiol, G. [1 ]
Magri, R. [2 ,3 ]
Heun, S. [4 ,5 ]
Locatelli, A. [6 ]
Mentes, T. O. [6 ]
Sorba, L. [1 ]
机构：
[1] CNR, INFM, TASC, Lab Nazl, I-34012 Trieste, Italy
[2] CNR, INFM, S3, I-41100 Modena, Italy
[3] Univ Modena & Reggio Emilia, I-41100 Modena, Italy
[4] CNR, INFM, NEST, I-56127 Pisa, Italy
[5] Scuola Normale Super Pisa, I-56127 Pisa, Italy
[6] Sincrotrone Trieste SCpA, I-34012 Trieste, Italy
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期
关键词：
Characterization; Growth models; Nanostructures; Surface structure; Molecular beam epitaxy; Semiconducting III-V materials; MOLECULAR-BEAM EPITAXY; GROWTH; DOTS;
D O I：
10.1016/j.jcrysgro.2008.09.198
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The composition profile of self-assembled InAs/GaAs quantum rings is investigated both experimentally and theoretically. Our study is aimed at obtaining information on unburied rings, which cannot be directly accessed in cross-sectional analysis. Two-dimensional surface chemical maps obtained by X-ray photoemission electron microscopy reveal a non-uniform composition profile with a double structure composed of an In-rich core, corresponding to the central hole of the ring, surrounded by a rim with a stronger In-Ga intermixing. These results are substantiated by an atomistic model which, for a given shape, identifies the composition distribution that minimizes the elastic energy of the system, The good agreement between experiment and theory allows us to identify the minimization of strain energy as the main driving force for the formation of quantum rings. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1764 / 1766
页数：3
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