Reentrant insulating phases in the integer quantum Hall regime

被引:3
|
作者
Knighton, Talbot [1 ]
Wu, Zhe [1 ]
Tarquini, Vinicio [1 ]
Huang, Jian [1 ]
Pfeiffer, L. N. [2 ]
West, K. W. [2 ]
机构
[1] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48201 USA
[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
基金
美国国家科学基金会;
关键词
SI INVERSION-LAYERS; MAGNETIC-FIELD; WIGNER CRYSTAL; ELECTRON-GAS; LIQUID; TRANSITION; TEMPERATURE; FREQUENCY; SYSTEMS; GLASS;
D O I
10.1103/PhysRevB.90.165117
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Quantum Hall measurements are performed in a dilute high-quality GaAs two-dimensional hole system with carrier densities of (4.4-5.3) x 10(10) cm(-2) . With the r(s) value approximately 20, the interaction effect is already strong even in the absence of magnetic field. In the integer quantum Hall regime up to 2 T, a series of reentrant insulating phases (RIPs) are observed between fillings 1, 2, 3, and 4, with peak locations periodic in 1/B. Moreover, the RIP peaks are also characterized by a striking inductance in response to excitations, which is likely due to the onset of a Wigner crystal state. The multiple RIP peaks indicate a more complex phase diagram than previously perceived.
引用
收藏
页数:5
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