Single Event Effect (SEE);
High-energy heavy ion microbeam;
Transient Ion Beam induced Current (TIBIC);
mapping;
INDUCED CHARGE;
SYSTEM;
D O I:
10.1016/j.nimb.2009.03.051
中图分类号:
TH7 [仪器、仪表];
学科分类号:
0804 ;
080401 ;
081102 ;
摘要:
Single Event Effects (SEEs) triggered by energetic heavy ions traversing a sensitive parts of electric devices have been studied using high-energy heavy ion microbeams connected with Transient Ion Beam Induced Current (TIBIC) measuring system at the Japan Atomic Energy Agency (JAEA) Takasaki Ion Accelerators for Advanced Radiation Applications (TIARA) facility. In the TIBIC system, SEE for semiconductor device, that is fast charge collection, has been observed in timescales of the order of picoseconds. In this paper, we show successful demonstration of the performance of the system, in which clear images of TIBIC map have been observed for Si pin photodiodes irradiated by 260 MeV (20)Ne(7+) and also by 520 Me (40)Ar(14+) microbeams. (c) 2009 Elsevier B.V. All rights reserved.