A quantum dot infrared photodetector with lateral carrier transport

被引：20

作者：

Chu, L ^{[1
]}

Zrenner, A ^{[1
]}

Bougeard, D ^{[1
]}

Bichler, M ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

quantum dot; intersubband; photocurrent;

D O I：

10.1016/S1386-9477(01)00543-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this contribution we present a normal-incidence quantum dot (QD) infrared detector structure. It is based on intra-conduction band transitions between the p-states of the QD and the wetting layer subband and lateral transport of photoexcited carriers in a channel next to the quantum dot layers. The photoresponse is peaked at 6.5 mum (186 meV) and reaches several A/W up to 60 K. The intrinsic detector response time is determined to be about 0.8 ms. Temperature and frequency dependence of the detector structure are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：301 / 304

页数：4

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